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| MCC Features * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4401 Through Hole Package Capable of 600mWatts of Power Dissipation NPN General Purpose Amplifier TO-92 Pin Configuration Bottom View C B E Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10mAdc, IE=0) Emitter-Base Breakdown Voltage (I E=0.1mAdc, IC=0) Base Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) Collector Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Collector-Base Capacitance (VCB=5.0Vdc, IE=0, f=100kHz) Emitter-Base Capacitance (VBE=0.5Vdc, IC=0, f=100kHz) Delay Time (VCC=30Vdc, VBE=0.2Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) 300s, Duty Cycle 2.0% Min 40 60 6.0 0.1 0.1 Max Units Vdc Vdc Vdc Adc Adc A E OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX B C ON CHARACTERISTICS hFE 20 40 80 100 40 300 D 0.4 0.75 Vdc VCE(sat) VBE(sat) 0.75 0.95 1.2 Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccb Ceb G 250 6.5 30.0 15 20 225 30 MHz DIMENSIONS pF pF ns ns ns ns DIM A B C D E G SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com 2N4401 DC Current Gain vs Collector Current 360 VCE = 10V 300 240 hFE 180 120 60 VBE(ON) - (V) 0.6 0.4 TA = 125C 0.2 0 1.2 1.0 0.8 TA = 25C MCC Base-Emitter ON Voltage vs Collector Current VCE = 10V 1 10 IC (mA) 100 1000 1 10 100 IC - (mA) 1000 Collector-Emitter Saturation Volatge vs Collector Current .24 .20 .16 VCE(SAT) - (V) .12 .08 .04 0 1.0 VBE(SAT) - (V) 1.1 IC/IB = 10 TA = 25C 1.0 0.9 0.8 0.7 0.6 Base-Emitter Saturation Voltage vs Collector Current IC/IB = 10 TA = 25C 10 IC - (mA) 100 1000 0.5 1.0 10 IC - (mA) 100 1000 Collector-Base Diode Reverse Current vs Temperature 100 40 32 VCB = 20V 10 ICBO - (mA) 1.0 8 0.1 0 25 50 75 TJ - (C) 100 125 150 pF 24 Input Capacitance vs Reverse Bias Voltage f = 1MHz 16 Ceb 0 0.1 1.0 Volts - (V) 10 www.mccsemi.com 2N4401 Maximum Power Dissipation vs Ambient Temperature 800 10 8 TO-92 PD(MAX) - (mW) 400 pF 6 MCC Output Capacitance vs Reverse Bias Voltage f = 1MHz 600 4 200 SOT-23 0 0 50 100 TA - (C) 150 200 2 0 0.1 Ccb 1.0 Volts - (V) 10 www.mccsemi.com |
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